mtt www.vishay.com vishay electro-films revision: 06-apr-17 1 document number: 61046 for technical questions, contact: efi@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 wire bondable thin film multi-tap resistor arrays product may not be to scale the mtt multi-tap resistors offe r nineteen taps allowing the user to select specified increments and a wide range of values. the desired resistance value is obtained by bonding the wires to the appropriate pads. these chips are manufactured using vishay electro-films (efi) sophisticated thin film equipment and manufacturing technology. the mtts are 100 % electrically tested and visually inspected to mil- std-883, method 2032 class h or k. features ? wire bondable ? selectable values by wire bonding ? resistance range: 1.1 k ? to 275 k ? ? chip size: 0.038" x 0.038" ? case: 0404 ? resistor material tantalum nitride, self-passivating ? oxidized silicon substrate for good power dissipation ? ideally suited for hybrid prototyping ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 applications the mtt series of multi-tap re sistor chips are designed to satisfy the requirements of prototype development and circuit trimming in hybrid packages through selective wire-bonding. example: when the total resistance value is 55 k ? , the resistors between pads 11 and 21 are 500 ? each, and the resistors between pads 1 and 11 are 5 k ? each. temperature coefficient of resistance, values, and tolerances parameter value unit total resistance range 1.1k, 2.75k, 5.5k, 11k, 27.5k, 55k, 110k, 275k ? 10 resistors between pads 1 and 11 ? 10 resistors between pads 11 and 21 each 9.1 % of total resistance each 0.91 % of total resistance standard tolerances 1, 5, 10, 20 of total resistance of all 20 resistors % tcr 250 ppm/c standard electrical specifications parameter value unit tcr tracking between elements 5 ppm/c noise, mil-std-202, method 308 -30 typ. db moisture resistance, mil-std- 202, method 106 0.5 max. ? r / r % stability, 1000 h, +125 c, 125 mw 0.5 max. ? r / r % operating temperature range -55 to +125 c thermal shock, mil-std-202, method 107, test condition f 0.25 max. ? r / r % high temperature exposure 150 c, 100 h 0.5 max. ? r / r % dielectric voltage breakdown 200 v insulation resistance 10 12 min. ? operating voltage 100 max. v dc power rating at +70 c (derated to zero at +175 c) 0.250, total r w 5x rated power short- time overload, +25 c, 5 s 0.25 max. ? r / r %
mtt www.vishay.com vishay electro-films revision: 06-apr-17 2 document number: 61046 for technical questions, contact: efi@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in inches schematic mechanical specifications parameter chip size 0.038" x 0.038" 0.002" (0.965 mm x 0.965 mm 0.05 mm) chip thickness 0.010" 0.002" (0.254 mm 0.05 mm) chip substrate material oxidized silicon, 10 k? minimum sio2 resistor material tantalum nitride, self-passivating bonding pads 0.004" x 0.004" (0.10 mm x 0.10 mm) number of pads 21 pad material 10 k? minimum aluminum backing none, lapped semiconduc tor silicon global part number information global part nu mber: mtt11002kmanhws global part number description: mtt 110k 10 %, 250 ppm/c, al termination, no back metal, class h, ws model resistance resistance multiplier code tol. code (%) tcr (ppm/c) termination back metal visual class packaging code mtt first 4 digits are significant figures of resistance a = 0.1 0 = 1 1 = 10 2 = 100 f = 1.0 g = 2.0 j = 5.0 k = 10 m = 20 l = 25 c = 50 k = 100 m = 250 r = 0 / -250 g = gold a = aluminum g = gold n = none h = class h k = class k ws = waffle pack 100 min, 1 mult historical part number: wmtt00210002k (will continue to be accepted) 0.038 0.009 0.004 21 0.004 typical ran g e 1.1 k to 5.5 k g e 11 k to 275 k r r r rr r r rrr 10 1 21 r t = 110 r r 10 r 10 r 10 r 10 r 10 r 10 r 10 r 10 r 10 r 002k anh m 1 ws t mt 1
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